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MXN2384 DFN2x3-6L

    Is MXN2384 VDS=20V, ID=9.5A, @VGS=4.5V, RDS(ON)(Typ.)=7.8mΩ , @VGS=4.2V, RDS(ON)(Typ.)=8mΩ , @VGS=3.8V, RDS(ON)(Typ.)=8.3mΩ , @VGS=2.5V, RDS(ON)(Typ.)=11mΩ Dual N-Channel
    The screen print of MOSFET.MXN2384 is SC29.
    The MXN2384 is available in a DFN2x3-6L package.
    The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

MXN2384 Description:
    Is MXN2384 VDS=20V, ID=9.5A, @VGS=4.5V, RDS(ON)(Typ.)=7.8mΩ , @VGS=4.2V, RDS(ON)(Typ.)=8mΩ , @VGS=3.8V, RDS(ON)(Typ.)=8.3mΩ , @VGS=2.5V, RDS(ON)(Typ.)=11mΩ Dual N-Channel
    The screen print of MOSFET.MXN2384 is SC29.
    The MXN2384 is available in a DFN2x3-6L package.
    The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

MXN2384 Features:

VDS =20V, ID =9.5A
@VGS=4.5V RDS(ON)(Typ.)=7.8mΩ
@VGS=4.2V RDS(ON)(Typ.)=8mΩ
@VGS=3.8V RDS(ON)(Typ.)=8.3mΩ
@VGS=2.5V RDS(ON)(Typ.)=11mΩ
ESD Rating:2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package


MXN2384 Applications:

PWM applications
Load switch

Typical application and pin diagram of MXN2384:

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