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PE7165G DFN5x6-8L
PE7165G is a P-Channel Enhancement Mode Power MOSFET with VDS=-18V,ID=-65A, RDS(ON)<4mΩ, @VGS=-4.5V, RDS(ON)<5.6mΩ, @VGS=-2.5V.
The screen printing of PE7165G is PE7165G.
The PE7165G is available in a DFN5x6-8L package.
The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
The screen printing of PE7165G is PE7165G.
The PE7165G is available in a DFN5x6-8L package.
The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7165G Description:
PE7165G is a P-Channel Enhancement Mode Power MOSFET with VDS=-18V,ID=-65A, RDS(ON)<4mΩ, @VGS=-4.5V, RDS(ON)<5.6mΩ, @VGS=-2.5V.
The screen printing of PE7165G is PE7165G.
The PE7165G is available in a DFN5x6-8L package.
The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
The screen printing of PE7165G is PE7165G.
The PE7165G is available in a DFN5x6-8L package.
The PE7165G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7165G Features:
VDS = -18V, ID = -65A
RDS(ON) < 4mΩ @ VGS=-4.5V
RDS(ON) < 5.6mΩ @VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE7165G Applications:
PE7165G Applications:
PWM applications
Load switch
Power management
PE7165G Typical application and pin:
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