Products
Products
PE7150M PDFN3.3*3.3-8L
PE7150M is VDS=18 V, ID = - 50a, RDS (ON) < 6.3mΩ, @VGS= 4.5V, RDS (ON) <7.0mΩ, @VGS =3.8V, RDS (ON) < 8.1mΩ, @ VGS=3.1V, RDS (ON) <9.0mΩ, @VGS=-2.5V P-Channel Enhancement Mode Power MOSFET.PE7150M Screen printing is PE7150M.
The PE7150M is available in a PDFN3.3*3.3-8L package.
The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
The PE7150M is available in a PDFN3.3*3.3-8L package.
The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7150M Description：
PE7150M is VDS=18 V, ID =-50a, RDS (ON) < 6.3mΩ, @VGS = 4.5V, RDS (ON) < 7.0mΩ, @ VGS=3.8 V, RDS (ON) < 8.1mΩ, @ VGS = 3.1 V, RDS (ON) < 9.0mΩ, @VGS=-2.5V P-Channel Enhancement Mode Power MOSFET.PE7150M Screen printing is PE7150M.
The PE7150M is available in a PDFN3.3*3.3-8L package.
The PE7150M is available in a PDFN3.3*3.3-8L package.
The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE7150M Features:
PE7150M Features:
VDS = -18V, ID = -50A
RDS(ON) < 6.3mΩ @ VGS=-4.5V
RDS(ON) < 7.0mΩ @ VGS=-3.8V
RDS(ON) < 8.1mΩ @ VGS=-3.1V
RDS(ON) < 9.0mΩ @VGS=-2.5V
High Power and current handing capability
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Good stability and uniformity with high EAS
PE7150M Applications:
PWM applications
Load switch
Power management
Battery protection
PE7150M Typical application and pin:
Please submit your basic information, send an email to Sales@ChipSourceTek.com, or call us at 13823761625 (same number as WeChat), and we will contact you as soon as possible!
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